ST STY145N65M5
| Manufacturer | |
| MPN | STY145N65M5 |
| LCSC Part # | C2688505 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 138A TO-247-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 413pF | |
| Current - Continuous Drain(Id) | 138A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 625W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 18.5nF | |
| Gate Charge(Qg) | 414nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Features
AI Translation
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
In-Stock: 466
466 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.0499 | $ 12.05 |
| 10+ | $ 10.2557 | $ 102.56 |
| 30+ | $ 9.1616 | $ 274.85 |
| 100+ | $ 8.2449 | $ 824.49 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 413pF | |
| Current - Continuous Drain(Id) | 138A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 625W | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 18.5nF | |
| Gate Charge(Qg) | 414nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Features
AI Translation
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C2688505 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



