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TI CSD19536KTTRoHS

Manufacturer
TI
MPN
CSD19536KTT
LCSC Part #
C2687963
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 100V 200A TO-263-3
Datasheetpdf iconTI CSD19536KTT

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingTO-263-3
Drain to Source Voltage100V
Output Capacitance(Coss)2.37nF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)2.2mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)12nF
Gate Charge(Qg)153nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging500
Sales UnitPiece

Introduction

AI Translation

This 100 V, 2 mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche-rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen-free
  • D2PAK plastic package

Applications

AI Translation
  • Secondary-side synchronous rectifier
  • Hot swap
  • Motor control
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.4851$ 4.49
10+$ 3.8965$ 38.97
30+$ 3.5479$ 106.44
100+$ 3.1944$ 319.44
500+$ 3.0323$ 1516.15
1,000+$ 2.9593$ 2959.30
Standard Packaging500/Full Reel
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