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STANSON Tech. ST1002RoHS

Manufacturer
STANSON Tech.Asian Brands
MPN
ST1002
LCSC Part #
C2682910
Packaging
SOT-23-3L
Customer #
Key Attributes
MOSFET N-CH 100V 3A SOT-23-3L
Datasheetpdf iconSTANSON Tech. ST1002
In-Stock: 2,545
2,545 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0763$ 0.38
50+$ 0.0596$ 2.98
150+$ 0.0513$ 7.70
500+$ 0.045$ 22.50
3,000+$ 0.04$ 120.00
6,000+$ 0.0375$ 225.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerSTANSON Tech.
PackagingSOT-23-3L
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)140mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)640pF
Gate Charge(Qg)45nC@50V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

ST1002 is an N-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suitable for low-voltage applications such as mobile phones, notebook computer power management, and other battery-powered circuits requiring high-side switching.

Features

AI Translation
  • 100V/3.0A, RDS(ON) = 135 mΩ at VGS = 10V
  • 100V/2.5A, RDS(ON) = 140 mΩ at VGS = 4.5V
  • Ultra-high density cell design for extremely low RDS(ON)
  • Excellent on-resistance and maximum DC current
  • SOT-23-3L package

Applications

AI Translation
  • Mobile phones
  • Laptop power management
  • Other battery-powered circuits requiring high-side switching