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STANSON Tech. ST1005SRG product image
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STANSON Tech. ST1005SRGRoHS

Manufacturer
STANSON Tech.Asian Brands
MPN
ST1005SRG
LCSC Part #
C2682898
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 100V 0.8A SOT-23
Datasheetpdf iconSTANSON Tech. ST1005SRG
In-Stock: 2,910
2,910 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.057$ 0.57
100+$ 0.0453$ 4.53
300+$ 0.0395$ 11.85
3,000+$ 0.0318$ 95.40
6,000+$ 0.0283$ 169.80
9,000+$ 0.0266$ 239.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerSTANSON Tech.
PackagingSOT-23
Drain to Source Voltage100V
Output Capacitance(Coss)550pF
Current - Continuous Drain(Id)800mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)650mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)600pF
Gate Charge(Qg)16nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

Features

AI Translation
  • -100V/-0.8.0A, RDS(ON)=650m -ohm (Typ.) @GS=-10V
  • -60V/-0.4A, RDS(ON)=700m -ohm @GS=-4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • SOT-23 package design

Applications

AI Translation
  • Mobile phone and laptop power management
  • Other battery-powered circuits