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VBsemi Elec P0903BDG-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
P0903BDG-VB
LCSC Part #
C2680757
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 80A TO-252
Datasheetpdf iconVBsemi Elec P0903BDG-VB
In-Stock: 2,184
2,184 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2912$ 0.2476$ 0.25
10+$ 0.2567$ 0.2182$ 2.18
30+$ 0.2426$ 0.2063$ 6.19
100+$ 0.2239$ 0.1904$ 19.04
500+$ 0.2035$ 0.1730$ 86.50
1,000+$ 0.1988$ 0.1690$ 169.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage30V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation205W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.201nF
Gate Charge(Qg)61nC@10V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
  • Compliant with EU RoHS Directive 2011/65/EU

Applications

AI Translation
  • OR-ing - Server - DC/DC Converter