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Infineon IRFP260NPBFRoHS

Manufacturer
Infineon
MPN
IRFP260NPBF
LCSC Part #
C2678
Packaging
TO-247AC-3
Customer #
Key Attributes
MOSFET N-CH 200V 50A TO-247AC-3
Datasheetpdf iconInfineon IRFP260NPBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247AC-3
Drain to Source Voltage200V
Output Capacitance(Coss)4.057nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)603pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.057nF
Gate Charge(Qg)234nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Introduction

AI Translation

The 5th Generation HEXFET utilizes advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the fast switching speed and rugged device design for which HEXFET power MOSFETs are renowned, provides designers with an exceptionally efficient and reliable device suitable for a wide range of applications. The TO-247 package is intended for commercial and industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar to the earlier TO-218 package, but offers superior performance due to its isolated mounting hole.

Features

AI Translation
  • Advanced process technology
  • Dynamic dv/dt rating
  • 175°C operating temperature
  • Fast switching
  • Fully avalanche rated
  • Easy to parallel
  • Simple drive requirements
  • Lead-free
In-Stock: 34,945
34,945 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9767$ 0.98
10+$ 0.8298$ 8.30
25+$ 0.6458$ 16.15
100+$ 0.5602$ 56.02
350+$ 0.5344$ 187.04
1,050+$ 0.5166$ 542.43
Standard Packaging25/Full Tube
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