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TI UCC27524A1QDGNRQ1RoHS

Manufacturer
MPN
UCC27524A1QDGNRQ1
LCSC Part #
C2677103
Packaging
HVSSOP-8
Customer #
Key Attributes
Dual-channel 5A high-speed low-side gate driver with negative input voltage capability
Datasheetpdf iconTI UCC27524A1QDGNRQ1
In-Stock: 124
124 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.12$ 1.12
10+$ 0.9318$ 9.32
30+$ 0.8265$ 24.80
100+$ 0.7084$ 70.84
500+$ 0.6574$ 328.70
1,000+$ 0.6334$ 633.40
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingHVSSOP-8
Input Logic Level - Low1V~1.4V
Low Level Delay Time13ns
High Level Delay Time13ns
Quiescent Current-
Input Logic Level - High1.9V~2.3V
Operating Temperature-40℃~+140℃
Voltage - Supply4.5V~18V
Driven ConfigurationLow Side
Current - Output Low(IOL)5A
Rise Time7ns
Fall Time6ns
FeaturesUnder Voltage Protection;Enable shutdown;Interleaved conduction protection
Current - Output High(IOH)5A
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The UCC27524A1-Q1 is a dual-channel, high-speed, low-side gate driver capable of efficiently driving MOSFET and IGBT power switches. To enhance robustness and durability, the UCC27524A1-Q1 adds the ability to directly handle –5V voltages on the input pins. The UCC27524A1-Q1 is a dual non-inverting driver. The UCC27524A1-Q1 employs a design that minimizes shoot-through current, delivering peak source/sink current pulses of up to 5A into capacitive loads, rail-to-rail drive capability, and very low propagation delay (typical 13ns). In addition, the driver features matched internal propagation delays between the two channels, making it well suited for applications with stringent dual gate drive timing requirements such as synchronous rectifiers. This also allows the two channels to be connected in parallel to effectively increase current drive capability or to drive two parallel switches from a single input signal. Input pin thresholds are based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds provides excellent noise immunity.

For protection purposes, internal pull-up and pull-down resistors on the input pins of the UCC27524A1-Q1 ensure the outputs are held low when the input pins are left floating. The UCC27524A1-Q1 features dedicated enable pins (ENA and ENB) for enhanced control of driver operation, making them an ideal choice for filter applications. These pins are internally pulled up to the VDD supply for active-high logic operation and can be left disconnected for standard operation.

The UCC27524A1-Q1 is available in MSOP-PowerPAD-8 and exposed pad (DGN) packages.

Features

AI Translation
  • Qualified for automotive applications with the following AEC-Q100 results:
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C4B
  • Industry-standard pinout
  • Two independent gate drive channels
  • 5A peak source and sink drive current
  • Independent support features per output
  • TTL and CMOS compatible logic thresholds independent of supply voltage
  • Hysteretic logic thresholds for high noise immunity
  • Ability to handle negative voltage (−5V) at inputs
  • Input and enable pin voltage levels not limited by VDD bias supply voltage
  • 4.5V to 18V single-supply range
  • Output held low during VDD UVLO (ensures glitch-free operation at power-up and power-down)
  • Fast propagation delay (13ns typical)
  • Fast rise and fall times (7ns and 6ns typical)
  • Delay matching between two channels: 1ns typical
  • Capability to parallel two high drive current outputs
  • Output held low when input is floating
  • MSOP-8 PowerPad package
  • Operating temperature range: −40℃ to +140℃

Applications

AI Translation
  • Automotive
  • Switch-mode power supplies
  • DC-to-DC converters
  • Motor control
  • Solar
  • Gate drive for emerging wide-bandgap power devices such as GaN