TI LM5113QDPRRQ1

LM5113-Q1 is a high-frequency, high- and low- side gate driver for enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half bridge configuration. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The LM5113-Q1 has split-gate outputs with strong sink capability, providing flexibility to adjust the turnon and turnoff strength independently. The LM5113-Q1 can operate up to several MHz, and is available in a standard 10-pin WSON package that contains an exposed pad to aid power dissipation.

• Qualified for automotive applications
• Meets AEC-Q100 requirements with the following characteristics:
• Device temperature grade 1: ambient operating temperature range –40°C to 125°C
• Device HBM ESD classification level 1C
• Device charged device model (CDM) ESD classification level C6
• Separate high-side and low-side TTL logic inputs
• 1.2A peak source current capability, 5A peak sink current capability
• High-side floating bias voltage rail operating voltage up to 100VDC
• Internal bootstrap supply voltage clamp
• Split output for adjustable turn-on and turn-off slew rate control
• 0.6Ω pull-down resistor, 2.1Ω pull-up resistor
• Fast propagation time (typical 28ns)
• Excellent propagation delay matching (typical 1.5ns)
• Supply rail undervoltage lockout
• Low power consumption

• Mobile wireless chargers
• Audio power amplifiers
• Audio power current-fed push-pull converters
• Half-bridge and full-bridge converters
• Synchronous buck converters