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Infineon 6EDL04N02PRXUMA1RoHS

Manufacturer
Infineon
MPN
6EDL04N02PRXUMA1
LCSC Part #
C2676965
Packaging
TSSOP-28
Customer #
Key Attributes
200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)
Datasheetpdf iconInfineon 6EDL04N02PRXUMA1
In-Stock: 54
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QtyUnit PriceTotal Amount
1+$ 3.7973$ 3.80
10+$ 3.2283$ 32.28
30+$ 2.8888$ 86.66
100+$ 2.5477$ 254.77
500+$ 2.3893$ 1194.65
1,000+$ 2.3182$ 2318.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerInfineon
PackagingTSSOP-28
Input Logic Level - Low700mV~1.1V
Low Level Delay Time530ns
High Level Delay Time530ns
Quiescent Current750uA
Input Logic Level - High1.7V~2.4V
Operating Temperature-40℃~+125℃
Voltage - Supply10V~17.5V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)375mA
Rise Time60ns
Fall Time26ns
FeaturesUnder Voltage Protection;Enable shutdown;Over Current Protection;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)165mA
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions. The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down off all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 μA. Therefore, the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN can optionally be extended with over-temperature detection, using an external NTC resistor. The monolithic integrated bootstrap diode structures between pins VCC and VBx can be used for power supply of the high side.

Features

AI Translation
  • Infineon thin-film-SOI-technology Maximum blocking voltage +600 V
  • Output source/sink current +0.165 A/-0.375 A
  • Integrated ultra-fast, low RDS(0N) Bootstrap Diode
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOI technology
  • Separate control circuits for all six drivers
  • Detection of over current and under voltage supply
  • Externally programmable delay for fault clear after over current detection
  • 'Shut down' of all switches during error conditions
  • CMOS and LSTTL compatible input (negative logic)
  • Signal interlocking of every phase to prevent cross conduction

Applications

AI Translation
  • Home appliance, refrigeration compressors, air-conditioning
  • Fans, pumps
  • Motor drives, general purpose inverters
  • Power tools, light electric vehicles