TI UCC27512DRSR

The UCC27511 and UCC27512 single-channel high-speed low-side gate driver devices effectively drive MOSFET and IGBT power switches. The UCC27511 and UCC27512 are designed to minimize shoot-through current, delivering high peak source/sink current pulses to capacitive loads while providing rail-to-rail drive capability and ultra-short propagation delay (13ns typical). The UCC27511 features a dual-input design, allowing flexible inverting (IN- pin) and non-inverting (IN+ pin) configurations within the same device. Both the IN+ and IN- pins can be used to control the state of the driver output. Unused input pins can serve as enable/disable functions. For safety, internal pull-up and pull-down resistors on the input pins ensure the output is held low when input pins are left floating. Therefore, unused input pins must not be left floating and must be properly biased to ensure the driver output is enabled for normal operation. The input pin thresholds of the UCC27511 are based on low-voltage logic compatible with TTL and CMOS, which are fixed and independent of the VDD supply voltage. The wide hysteresis between high and low thresholds provides excellent noise immunity. The UCC27511 and UCC27512 offer peak drive current capability of 4A source and 8A sink (asymmetric drive). The strong sink current capability in asymmetric drive enhances immunity to parasitic Miller turn-on effects. The UCC27511 also features a unique split-output configuration, where gate drive current is sourced through the OUTH pin and sunk through the OUTL pin. This unique pin arrangement allows users to use separate turn-on and turn-off resistors at the OUTH and OUTL pins respectively, enabling easy control of switching slew rate. The UCC27511 and UCC27512 feature a wide VDD range of 4.5V to 18V and a wide temperature range of -40℃ to 140℃. An internal UVLO circuit on the VDD pin holds the output low when the VDD operating range is exceeded. The ability to operate at low voltages (e.g., below 5V) combined with best-in-class switching characteristics makes these devices well suited for driving emerging wide-bandgap power switch devices such as GaN power semiconductors.

• Low-cost gate driver offering a high-quality alternative to NPN and PNP discrete solutions
• Asymmetric 4A peak source and 8A peak sink drive
• Strong sink current for enhanced Miller turn-on immunity
• UCC27511 split-output configuration (enables independent turn-on/turn-off speed adjustment), saving one diode
• Short propagation delay (13ns typical)
• Short rise and fall times (9ns and 7ns typical, respectively)
• 4.5V to 18V single-supply range
• Output held low during VDD UVLO (ensures glitch-free operation during power-up and power-down)
• TTL and CMOS compatible input logic thresholds (independent of supply voltage)
• Hysteretic logic thresholds for high noise immunity
• Dual-input design (selectable inverting (IN- pin) or non-inverting (IN+ pin) driver configuration)
• Unused input pin usable for enable/disable function
• Output held low when input pins are floating
• Input pin absolute maximum voltage levels independent of VDD pin bias supply voltage
• -40℃ to 140℃ operating temperature range
• 6-pin DBV (SOT-23) and 6-pin DRS (3mm x 3mm WSON with exposed thermal pad) package options

• Switching mode power supplies
• DC-DC converters
• Companion gate driver devices for digital power controllers
• Solar, motor control, uninterruptible power supplies (UPS)
• Gate drivers for newly released wide bandgap power devices (e.g., GaN)