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TI TPS28225DRBRRoHS

Manufacturer
TI
MPN
TPS28225DRBR
LCSC Part #
C2676914
Packaging
SON-8-EP(3x3)
Customer #
Key Attributes
High-Frequency 4-A Sink Synchronous MOSFET Drivers
Datasheetpdf iconTI TPS28225DRBR
In-Stock: 120
120 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.9832$ 1.98
10+$ 1.7756$ 17.76
30+$ 1.6297$ 48.89
100+$ 1.4951$ 149.51
500+$ 1.4335$ 716.75
1,000+$ 1.4091$ 1409.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingSON-8-EP(3x3)
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current500uA
Input Logic Level - High-
Voltage - Supply4.5V~8.8V
Operating Temperature-40℃~+125℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)4A
Rise Time10ns
Fall Time5ns
FeaturesUnder Voltage Protection;Enable shutdown;Overtemperature protection (OTP);Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)2A
Load TypeMOSFET
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shootthrough current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

Features

AI Translation
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40 -A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow F_SW - 2 MHz
  • Capable to Propagate <30 -ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

Applications

AI Translation
  • Multi-Phase DC-to-DC Converters with Analog or Digital Control
  • Desktop and Server VRMs and EVRDs
  • Portable and Notebook Regulators
  • Synchronous Rectification for Isolated Power Supplies