TI SN74LVTH16541DGGR

These 16-bit buffers/drivers are designed specifically for low-voltage (3.3-V) VCC operation, but with the capability to provide a TTL interface to a 5-V system environment. These devices are noninverting 16-bit buffers composed of two 8-bit sections with separate output-enable signals. For either 8-bit buffer section, the two output-enable (1OE1 and 1OE2 or 2OE1 and 2OE2) inputs must be low for the corresponding Y outputs to be active. If either output-enable input is high, the outputs of that 8-bit buffer section are in the high-impedance state. When VCC is between 0 and 1.5 V, the devices are in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 1.5 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level. These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the devices when they are powered down. The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict. The SN54LVTH16541 is characterized for operation over the full temperature range of -55℃ to 125℃. The SN74LVTH16541 is characterized for operation from -40℃ to 85℃.

• Members of the Texas Instruments Widebus Family
• State-of-the-Art Advanced BiCMOS Technology (ABT) Design for 3.3-V Operation and Low Static-Power Dissipation
• Support Mixed-Mode Signal Operation (5-V Input and Output Voltages With 3.3-V VCC)
• Support Unregulated Battery Operation Down to 2.7 V
• Typical VOLP (Output Ground Bounce) < 0.8 V at VCC = 3.3V, TA = 25℃
• Ioff and Power-Up 3-State Support Hot Insertion
• Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors
• Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise
• Flow-Through Architecture Optimizes PCB Layout
• Latch-Up Performance Exceeds 500 mA Per JESD 17
• ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model τ (C = 200 pF, R = 0)
• Package Options Include Plastic Shrink Small-Outline (DL) and Thin Shrink Small-Outline (DGG) Packages and 380-mil Fine-Pitch Ceramic Flat (WD) Package Using 25-mil Center-to-Center Spacings