LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
TI SN74CBT3305CPWR product image
  • SN74CBT3305CPWR thumbnail 1
  • SN74CBT3305CPWR thumbnail 2
  • SN74CBT3305CPWR thumbnail 3
  • Pinout
  • Footprint
Images for reference only

TI SN74CBT3305CPWRRoHS

Manufacturer
MPN
SN74CBT3305CPWR
LCSC Part #
C2674841
Packaging
TSSOP-8
Customer #
Key Attributes
DUAL FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION
Datasheetpdf iconTI SN74CBT3305CPWR
In-Stock: 65
65 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4069$ 0.41
10+$ 0.3976$ 3.98
30+$ 0.3899$ 11.70
100+$ 0.3837$ 38.37
Standard Packaging2000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIntegrated Circuits (ICs)/Logic/Signal Switches, Multiplexers, Decoders
ManufacturerTI
PackagingTSSOP-8
Type-
Voltage - Supply4.5V~5.5V
Operating Temperature-40℃~+85℃
FeaturesPower-off protection;Output enable high-impedance
Quiescent Current3uA
Current - Output High(IOH)-
Propagation Delay0.15ns@5V,50pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

The SN74CBT3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (rₒₙ), allowing for minimal propagation delay. Active undershoot-protection circuitry on the A and B ports of the device provides protection for undershoot up to -2V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and the high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down application using Iₒff. The Iₒff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

Features

AI Translation
  • Undershoot Protection for OFF Isolation on A and B Ports up to -2V
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (rₒₙ) Characteristics (rₒₙ = 3 Ω Typ)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cᵢₒ(ₒff) = 5 pF Typ)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (Icc = 3 μA Max)
  • Vcc Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, ClassII
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Bus Isolation, Low-Distortion Signal Gating