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onsemi BSS84RoHS

Manufacturer
MPN
BSS84
LCSC Part #
C266796
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 50V 0.13A SOT-23
Datasheetpdf icononsemi BSS84

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Drain to Source Voltage50V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)130mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)10Ω@5V
Number1 P-Channel
Input Capacitance(Ciss)73pF
Gate Charge(Qg)1.3nC@5V
TypeP-Channel

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-channel enhancement-mode field-effect transistor is produced using proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

Features

AI Translation
  • -0.13 A, -50 V, RDS(ON)=10 Ω at VGS=-5 V
  • Voltage-Controlled P-Channel Small-Signal Switch
  • High-Density Cell Design for Low RDS(ON)
  • High Saturation Current
In-Stock: 7,600
7,600 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0873$ 0.87
100+$ 0.0717$ 7.17
300+$ 0.0639$ 19.17
3,000+$ 0.054$ 162.00
6,000+$ 0.0494$ 296.40
9,000+$ 0.047$ 423.00
Standard Packaging3000/Full Reel
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