VISHAY SIC639CD-T1-GE3

The SiC639 are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm×5 mm MLP package, SiC639 enables voltage regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilizes Vishay’s state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC639 incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detection to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V, 5 V PWM logic.

• Thermally enhanced PowerPAK MLP55-31 L package RoHS
• Vishay’s Gen IV MOSFET technology and a low side MOSFET with integrated Schottky diode
• Delivers up to 50 A continuous current
• High efficiency performance
• High frequency operation up to 1.5 MHz
• Power MOSFETs optimized for 19 V input stage
• 3.3 V, 5 V PWM logic with tri-state and hold-off
• Zero current detect control for light load efficiency improvement
• Low PWM propagation delay (< 20 ns)
• Faster disable
• Thermal monitor flag
• Under voltage lockout for VCIN

• Multi-phase VRDs for computing, graphics card and memory
• Intel IMVP-8/9 VRPower delivery - VCORE, VGRAPHICS, VSYSTEM AGENT Skylake, Kabylake platforms - VCCGI for Apollo Lake platforms
• Up to 24 V rail input DC/DC VR modules