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Infineon IRFB4229PBF
| Manufacturer | |
| MPN | IRFB4229PBF |
| LCSC Part # | C2653 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET 250V 46A TO-220AB |
| Datasheet | Infineon IRFB4229PBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 390pF | |
| Ciss-Input Capacitance | 4.56nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 46A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 390pF | |
| Ciss-Input Capacitance | 4.56nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 46A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
AI Translation
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W - 500w (Half-bridge)
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In-Stock: 7,452
7,452 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6208 | $ 1.62 |
| 10+ | $ 1.3701 | $ 13.70 |
| 50+ | $ 1.0735 | $ 53.68 |
| 100+ | $ 0.9194 | $ 91.94 |
| 500+ | $ 0.849 | $ 424.50 |
| 1,000+ | $ 0.8195 | $ 819.50 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 390pF | |
| Ciss-Input Capacitance | 4.56nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 46A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 390pF | |
| Ciss-Input Capacitance | 4.56nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 250V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 46A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 46mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
AI Translation
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W - 500w (Half-bridge)
C2653 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FDP51N25 | onsemi | Similar | TO-220 | 4 | $ 2.0695 | ||
| GBS65060TOA | GOSEMICON | Similar | TO-220 | 35 | $ 3.4088 | ||
| H40N25 | Huixin | Similar | TO-220AB | 76 | $1.7497 $1.9882 | ||
| CMP30R019SD | Cmos | Similar | TO-220 | 188 | $3.5509 $3.7377 | ||
| NTP055N65S3H | onsemi | Similar | TO-220 | 225 | $ 2.4517 |