TI LM74610QDGKRQ1

The LM74610-Q1 is a controller device that can be used with N-channel MOSFETs in reverse polarity protection circuits. It is designed to drive an external MOSFET and can simulate an ideal diode rectifier when connected in series with a power supply. The unique advantage of this mechanism is that it is not referenced to ground, so the quiescent current (Iq) is zero. The LM74610-Q1 controller provides gate drive for an external N-channel MOSFET and is equipped with a fast-response internal comparator that can discharge the MOSFET gate in the event of reverse polarity. This fast voltage drop characteristic effectively limits the magnitude and duration of the reverse current when reverse polarity is detected. Additionally, the device is designed with appropriate TVS diodes and complies with the CISPR25 Class 5 EMI specification and automotive ISO7637 transient requirements.

• Qualified for automotive applications with the following AEC-Q100 results:
• Exceeds HBM ESD classification level 2; CDM ESD classification level C4B
• Minimum reverse voltage: 45V
• No positive voltage limitation on positive pin
• Charge pump gate driver for external N-channel MOSFET
• Lower power dissipation than Schottky diode/PFET solutions
• Low reverse polarity leakage current
• Zero IQ
• Fast response to reverse polarity condition within 2μs
• Operating ambient temperature: -40°C to 125°C
• Suitable for OR-ing applications
• Compliant with CISPR25 EMI specifications
• Meets automotive ISO7637 transient requirements with appropriate TVS diode selection

• Advanced Driver Assistance Systems (ADAS)
• Infotainment Systems
• Power Tools (Industrial)
• Transmission Control Unit (TCU)
• Battery OR-ing Applications