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Infineon IRFB4020PBFRoHS

Manufacturer
Infineon
MPN
IRFB4020PBF
LCSC Part #
C2649
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 200V 18A TO-220AB
Datasheetpdf iconInfineon IRFB4020PBF
In-Stock: 3,237
3,237 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8011$ 0.80
10+$ 0.6546$ 6.55
50+$ 0.5813$ 29.07
100+$ 0.508$ 50.80
500+$ 0.4641$ 232.05
1,000+$ 0.4413$ 441.30
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage200V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
Gate Charge(Qg)29nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

Features

AI Translation
  • Key parameters optimized for Class-D audio amplifier applications
  • Low RDSON for improved efficiency
  • Low QG and QSW for better THD and improved efficiency
  • Low QRR for better THD and lower EMI
  • 175°C operating junction temperature for ruggedness
  • Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier