ST STW15NK90Z
| Manufacturer | |
| MPN | STW15NK90Z |
| LCSC Part # | C262984 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 900V 15A 4.5V 350W 550mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 350W | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.1nF | |
| Gate Charge(Qg) | 256nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SuperMESH series is derived from extreme optimization of the well-established strip-based PowerMESH layout. In addition to significantly reducing on-resistance, particular emphasis has been placed on ensuring outstanding dv/dt capability in the most demanding applications. This series complements the full range of high-voltage MOSFETs, including the innovative MDmesh products.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Extremely low intrinsic capacitance
- Excellent manufacturing repeatability
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.1209 | $ 3.12 |
| 10+ | $ 2.6397 | $ 26.40 |
| 30+ | $ 2.3403 | $ 70.21 |
| 100+ | $ 2.0329 | $ 203.29 |
| 500+ | $ 1.8929 | $ 946.45 |
| 1,000+ | $ 1.8333 | $ 1833.30 |
Standard Packaging30/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 350W | |
| RDS(on) | 550mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.1nF | |
| Gate Charge(Qg) | 256nC@10V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SuperMESH series is derived from extreme optimization of the well-established strip-based PowerMESH layout. In addition to significantly reducing on-resistance, particular emphasis has been placed on ensuring outstanding dv/dt capability in the most demanding applications. This series complements the full range of high-voltage MOSFETs, including the innovative MDmesh products.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Extremely low intrinsic capacitance
- Excellent manufacturing repeatability
Applications
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



