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ST STP7NK80ZRoHS

Manufacturer
ST
MPN
STP7NK80Z
LCSC Part #
C262959
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 800V 5.2A TO-220
Datasheetpdf iconST STP7NK80Z
In-Stock: 403
403 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.7236$ 1.72
10+$ 1.4632$ 14.63
30+$ 1.2988$ 38.96
100+$ 1.1328$ 113.28
500+$ 1.0563$ 528.15
1,000+$ 1.0238$ 1023.80
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage800V
Output Capacitance(Coss)122pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.138nF
Gate Charge(Qg)56nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.

Features

AI Translation
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability

Applications

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  • Switching application