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ST STF5NK100Z
| Manufacturer | |
| MPN | STF5NK100Z |
| LCSC Part # | C262939 |
| Packaging | TO-220FPAB-3 |
| Customer # | |
| Key Attributes | 1kV 3.5A 3V 30W 2.7Ω@10V 1 N-channel TO-220FPAB-3 Single FETs, MOSFETs RoHS |
| Datasheet |  ST STF5NK100Z |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FPAB-3 | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 3.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21.3pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.154nF | |
| Gate Charge(Qg) | 59nC@800V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The new SuperMESH series power MOSFETs represent a further design advancement built upon the well-established strip-based PowerMESH layout. In addition to a significant reduction in on-resistance, these devices feature excellent dv/dt capability, ensuring optimal performance even in the most demanding applications. The SuperMESH devices further complement the existing range of innovative high-voltage MOSFETs, which includes the groundbreaking MDmesh products.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Extremely low intrinsic capacitance
- Excellent manufacturing repeatability
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.5237 | $ 2.52 |
| 10+ | $ 2.1308 | $ 21.31 |
| 30+ | $ 1.8863 | $ 56.59 |
| 100+ | $ 1.6336 | $ 163.36 |
| 500+ | $ 1.5211 | $ 760.55 |
| 1,000+ | $ 1.4722 | $ 1472.20 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FPAB-3 | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 3.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21.3pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.154nF | |
| Gate Charge(Qg) | 59nC@800V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The new SuperMESH series power MOSFETs represent a further design advancement built upon the well-established strip-based PowerMESH layout. In addition to a significant reduction in on-resistance, these devices feature excellent dv/dt capability, ensuring optimal performance even in the most demanding applications. The SuperMESH devices further complement the existing range of innovative high-voltage MOSFETs, which includes the groundbreaking MDmesh products.
Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Minimized gate charge
- Extremely low intrinsic capacitance
- Excellent manufacturing repeatability
Applications
- Switching applications
C262939 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |