ST STD3NK60ZT4
| Manufacturer | |
| MPN | STD3NK60ZT4 |
| LCSC Part # | C262932 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 2.4A TO-252(DPAK) |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 2.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 311pF | |
| Gate Charge(Qg) | 11.8nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 2.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 311pF | |
| Gate Charge(Qg) | 11.8nC@10V | |
| Type | N-Channel |
Introduction
The SuperMESH™series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™products.
Features
- TYPICAL RDS(on)=3.3 Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- 100% AVALANCHE TESTED
- GATE CHARGE MINIMIZED
- VERY LOW INTRINSIC CAPACITANCES
- VERY GOOD MANUFACTURING REPEATIBILITY
Applications
- HIGH CURRENT, HIGH SPEED SWITCHING
- IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
- LIGHTING
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.671 | $ 0.67 |
| 10+ | $ 0.5524 | $ 5.52 |
| 30+ | $ 0.5004 | $ 15.01 |
| 100+ | $ 0.4371 | $ 43.71 |
| 500+ | $ 0.4078 | $ 203.90 |
| 1,000+ | $ 0.3916 | $ 391.60 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 2.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 311pF | |
| Gate Charge(Qg) | 11.8nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 43pF | |
| Current - Continuous Drain(Id) | 2.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 3.6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 311pF | |
| Gate Charge(Qg) | 11.8nC@10V | |
| Type | N-Channel |
Introduction
The SuperMESH™series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™products.
Features
- TYPICAL RDS(on)=3.3 Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- 100% AVALANCHE TESTED
- GATE CHARGE MINIMIZED
- VERY LOW INTRINSIC CAPACITANCES
- VERY GOOD MANUFACTURING REPEATIBILITY
Applications
- HIGH CURRENT, HIGH SPEED SWITCHING
- IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
- LIGHTING
C262932 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



