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Infineon IRF5210PBFRoHS

Manufacturer
Infineon
MPN
IRF5210PBF
LCSC Part #
C2621
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET P-CH 100V 40A TO-220AB
Datasheetpdf iconInfineon IRF5210PBF
In-Stock: 11,667
11,667 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.8514$ 0.85
10+$ 0.766$ 7.66
50+$ 0.7176$ 35.88
100+$ 0.6644$ 66.44
500+$ 0.6418$ 320.90
1,000+$ 0.6305$ 630.50
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage100V
Output Capacitance(Coss)790pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.7nF
Gate Charge(Qg)180nC@10V
TypeP-Channel
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Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated
  • Lead-Free