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Infineon IRF2804PBFRoHS

Manufacturer
Infineon
MPN
IRF2804PBF
LCSC Part #
C2610
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 40V 270A TO-220AB
Datasheetpdf iconInfineon IRF2804PBF
In-Stock: 62
62 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8798$ 0.88
10+$ 0.787$ 7.87
50+$ 0.7135$ 35.68
100+$ 0.6559$ 65.59
500+$ 0.6303$ 315.15
1,000+$ 0.6175$ 617.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage40V
Current - Continuous Drain(Id)270A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)840pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.45nF
Gate Charge(Qg)240nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free