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Infineon IRF1404ZPBF product image
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Infineon IRF1404ZPBFRoHS

Manufacturer
Infineon
MPN
IRF1404ZPBF
LCSC Part #
C2608
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 40V 120A TO-220AB
Datasheetpdf iconInfineon IRF1404ZPBF
In-Stock: 426
426 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.8614$ 0.86
10+$ 0.6891$ 6.89
50+$ 0.603$ 30.15
100+$ 0.5168$ 51.68
500+$ 0.4665$ 233.25
1,000+$ 0.4405$ 440.50
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage40V
Output Capacitance(Coss)3.3nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)550pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.34nF
Gate Charge(Qg)150nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design area 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175℃ Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free