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Infineon IMZA65R015M2HXKSA1 product image
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Infineon IMZA65R015M2HXKSA1RoHS

Manufacturer
Infineon
MPN
IMZA65R015M2HXKSA1
LCSC Part #
C25949769
Packaging
TO-247-4
Customer #
Key Attributes
650V CoolSiC MOSFET G2
Datasheetpdf iconInfineon IMZA65R015M2HXKSA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 18.5145$ 18.51
10+$ 17.5821$ 175.82
30+$ 15.9638$ 478.91
90+$ 14.5531$ 1309.78
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-4
Drain to Source Voltage650V
Output Capacitance(Coss)269pF
Current - Continuous Drain(Id)103A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation341W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)18mΩ
Number1 N-channel
Input Capacitance(Ciss)2.792nF
Gate Charge(Qg)79nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Built on Infineon's robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfil the ever- growing system and market needs.

Features

AI Translation
  • Ultra- low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust against parasitic turn- on even with 0 V turn- off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • XT interconnection technology for best- in- class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives