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Infineon IRLML2803TRPBF product image
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Infineon IRLML2803TRPBFRoHS

Manufacturer
Infineon
MPN
IRLML2803TRPBF
LCSC Part #
C2590
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 30V 1.2A SOT-23
Datasheetpdf iconInfineon IRLML2803TRPBF
In-Stock: 29,980
29,980 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1264$ 0.63
50+$ 0.1007$ 5.04
150+$ 0.0879$ 13.19
500+$ 0.0783$ 39.15
3,000+$ 0.0706$ 211.80
6,000+$ 0.0667$ 400.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSOT-23
Drain to Source Voltage30V
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation540mW
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)85pF
Gate Charge(Qg)5nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards.

Features

AI Translation
  • Generation V Technology
  • Ultra Low On-Resistance
  • N-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free
  • RoHS Compliant, Halogen-Free