MACOM CG2H40010F
| Manufacturer | |
| MPN | CG2H40010F |
| LCSC Part # | C25848277 |
| Packaging | SMD |
| Customer # | |
| Key Attributes | 120V 1.5A 3V 1 N-channel SMD RF FETs, MOSFETs RoHS |
| Datasheet |  MACOM CG2H40010F |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | MACOM | |
| Packaging | SMD | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 1.5A | |
| Type | N-Channel | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Technology | D-mode | |
| Operating Temperature | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.186pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.19pF | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coss) | 1.84pF |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The CG2H40010 is a high-performance GaN HEMT. Operating from a 28V supply, the device provides a versatile broadband solution for a wide range of RF and microwave applications. The inherently high efficiency, high gain, and broadband capability of GaN HEMTs make the CG2H40010 well suited for both linear and compressed amplifier circuits. The transistor is available in both a screw-mount flange package and a solder-mount pill package.
Applications
- Land mobile radio
- Broadband amplifiers
- Cellular infrastructure
- Test and measurement
- Class A, Class AB linear amplifiers
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 101.61 | $ 101.61 |
| 30+ | $ 96.3235 | $ 2889.71 |
Standard Packaging50/Full Tray | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | MACOM | |
| Packaging | SMD | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 1.5A | |
| Type | N-Channel | |
| RDS(on) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Technology | D-mode | |
| Operating Temperature | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.186pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.19pF | |
| Gate Charge(Qg) | - | |
| Output Capacitance(Coss) | 1.84pF |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The CG2H40010 is a high-performance GaN HEMT. Operating from a 28V supply, the device provides a versatile broadband solution for a wide range of RF and microwave applications. The inherently high efficiency, high gain, and broadband capability of GaN HEMTs make the CG2H40010 well suited for both linear and compressed amplifier circuits. The transistor is available in both a screw-mount flange package and a solder-mount pill package.
Applications
- Land mobile radio
- Broadband amplifiers
- Cellular infrastructure
- Test and measurement
- Class A, Class AB linear amplifiers
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |