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ST STL125N10F8AG product image
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ST STL125N10F8AGRoHS

Manufacturer
ST
MPN
STL125N10F8AG
LCSC Part #
C25810050
Packaging
PowerFLAT5x6
Customer #
Key Attributes
MOSFET N-CH 100V 125A PowerFLAT5x6
Datasheetpdf iconST STL125N10F8AG
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.4667$ 3.47
10+$ 3.3924$ 33.92
30+$ 3.3414$ 100.24
100+$ 3.2903$ 329.03
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingPowerFLAT5x6
Drain to Source Voltage100V
Output Capacitance(Coss)840pF
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
RDS(on)3.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)3.6nF
Gate Charge(Qg)56nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

STL125N10F8AG is a 100 V N-channel enhancement-mode power MOSFET designed with STripFET F8 technology, featuring an advanced trench gate structure. It delivers an outstanding figure of merit, achieving ultra-low on-state resistance while reducing internal capacitance and gate charge for faster, more efficient switching.

Features

AI Translation
  • AEC-Q101 qualified
  • MSL1 rated
  • Maximum junction temperature 175 °C
  • 100% avalanche tested
  • Low gate charge Qg
  • Solderable flank package

Applications

AI Translation
  • Automotive motor control - Electric mobility