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Infineon IRF9540NPBFRoHS

Manufacturer
Infineon
MPN
IRF9540NPBF
LCSC Part #
C2575
Packaging
TO-220
Customer #
Key Attributes
MOSFET P-CH 100V 23A TO-220
Datasheetpdf iconInfineon IRF9540NPBF
In-Stock: 49,345
49,345 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3755$ 1.88
50+$ 0.2825$ 14.13
150+$ 0.2443$ 36.65
500+$ 0.2102$ 105.10
2,500+$ 0.2008$ 502.00
5,000+$ 0.1952$ 976.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220
Drain to Source Voltage100V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)117mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)97nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Lead-Free
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • P-Channel
  • Fully Avalanche Rated