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VISHAY IRF830PbFRoHS

Manufacturer
VISHAY
MPN
IRF830PbF
LCSC Part #
C2573
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 500V 4.5A TO-220AB
Datasheetpdf iconVISHAY IRF830PbF
In-Stock: 37,847
37,847 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7315$ 0.73
10+$ 0.6001$ 6.00
50+$ 0.4898$ 24.49
100+$ 0.4249$ 42.49
500+$ 0.386$ 193.00
1,000+$ 0.3649$ 364.90
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-220AB
Drain to Source Voltage500V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)610pF
Gate Charge(Qg)38nC@10V
TypeN-Channel
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Introduction

AI Translation

Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC