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Infineon IRF3710PBF product image
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Infineon IRF3710PBFRoHS

Manufacturer
Infineon
MPN
IRF3710PBF
LCSC Part #
C2562
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 100V 57A TO-220AB
Datasheetpdf iconInfineon IRF3710PBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage100V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)57A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.13nF
Gate Charge(Qg)130nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175℃ Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free
In-Stock: 49,435
49,435 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4904$ 0.49
10+$ 0.3784$ 3.78
50+$ 0.3264$ 16.32
100+$ 0.2793$ 27.93
500+$ 0.2647$ 132.35
1,000+$ 0.2566$ 256.60
Standard Packaging50/Full Tube
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