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Infineon IRF3205PBFRoHS

Manufacturer
MPN
IRF3205PBF
LCSC Part #
C2561
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 55V 110A TO-220AB
Datasheetpdf iconInfineon IRF3205PBF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage55V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)211pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.247nF
Gate Charge(Qg)146nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free
In-Stock: 22,129
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Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4562$ 0.46
10+$ 0.3575$ 3.58
50+$ 0.3057$ 15.29
100+$ 0.2621$ 26.21
500+$ 0.2507$ 125.35
1,000+$ 0.2427$ 242.70
Standard Packaging50/Full Tube
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