- Pinout Diagram
- Footprint Diagram
Infineon IRF1405PBF
| Manufacturer | |
| MPN | IRF1405PBF |
| LCSC Part # | C2559 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 55V 169A TO-220AB |
| Datasheet |  Infineon IRF1405PBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 169A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 330W | |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF | |
| RDS(on) | 5.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.48nF | |
| Gate Charge(Qg) | 260nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Applications
- Industrial motor drive
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8384 | $ 0.84 |
| 10+ | $ 0.6984 | $ 6.98 |
| 50+ | $ 0.5504 | $ 27.52 |
| 100+ | $ 0.482 | $ 48.20 |
| 500+ | $ 0.4407 | $ 220.35 |
| 1,000+ | $ 0.4184 | $ 418.40 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 169A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 330W | |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF | |
| RDS(on) | 5.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.48nF | |
| Gate Charge(Qg) | 260nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Applications
- Industrial motor drive
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |