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onsemi FDMC8200SRoHS

Manufacturer
onsemi
MPN
FDMC8200S
LCSC Part #
C255596
Packaging
Power-33-8
Customer #
Key Attributes
Dual N-Channel, Current: 18A, Voltage: 30V
Datasheetpdf icononsemi FDMC8200S
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.9196$ 0.92
10+$ 0.7831$ 7.83
30+$ 0.7149$ 21.45
100+$ 0.6467$ 64.67
500+$ 0.6077$ 303.85
1,000+$ 0.5865$ 586.50
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingPower-33-8
Current - Continuous Drain(Id)46A
RDS(on)32mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)52pF
Number2 N-Channel
Input Capacitance(Ciss)1.436nF
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)495pF
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Introduction

AI Translation

Q1: N-Channel Max rDS(on)=20 mΩ at VGS=10 V, ID=6 A Max rDS(on)=32 mΩ at VGS=4.5 V, ID=5 A Q2: N-Channel Max rDS(on)=10 mΩ at VGS=10 V, ID=8.5 A Max rDS(on)=13.5 mΩ at VGS=4.5 V, ID=7.2

This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.

Features

AI Translation
  • Q1: N-channel
  • Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A
  • Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A
  • Q2: N-channel
  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
  • Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
  • RoHS compliant

Applications

AI Translation
  • Mobile Computing
  • Mobile Internet Devices
  • General Purpose Point of Load