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onsemi FDMC7200S
| Manufacturer | |
| MPN | FDMC7200S |
| LCSC Part # | C255594 |
| Packaging | Power-33-8 |
| Customer # | |
| Key Attributes | Dual N-Channel MOSFET, Current: 18A, Voltage: 30V |
| Datasheet | onsemi FDMC7200S |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 7 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | Power-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 495pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 46A | |
| RDS(on) | 10mΩ@10V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.436nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | Power-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 495pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 46A | |
| RDS(on) | 10mΩ@10V | |
| Pd - Power Dissipation | 2.5W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.436nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The device is housed in a Dual Power 33 (3mm x 3mm MLP) package and contains two dedicated N-channel MOSFETs. The switching nodes are internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) are carefully designed to deliver optimal power efficiency.
Features
AI Translation
- Q1: N-channel
- Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A
- Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A
- Q2: N-channel
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
- Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
- RoHS compliant
Applications
AI Translation
- Mobile Computing
- Mobile Internet Devices
- General Point-of-Load
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Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6158 | $ 0.62 |
| 10+ | $ 0.5232 | $ 5.23 |
| 30+ | $ 0.4842 | $ 14.53 |
| 100+ | $ 0.4338 | $ 43.38 |
| 500+ | $ 0.4127 | $ 206.35 |
| 1,000+ | $ 0.3981 | $ 398.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | Power-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 495pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 46A | |
| RDS(on) | 10mΩ@10V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.436nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | Power-33-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 495pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 46A | |
| RDS(on) | 10mΩ@10V | |
| Pd - Power Dissipation | 2.5W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.436nF | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±20V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The device is housed in a Dual Power 33 (3mm x 3mm MLP) package and contains two dedicated N-channel MOSFETs. The switching nodes are internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) are carefully designed to deliver optimal power efficiency.
Features
AI Translation
- Q1: N-channel
- Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A
- Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A
- Q2: N-channel
- Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
- Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
- RoHS compliant
Applications
AI Translation
- Mobile Computing
- Mobile Internet Devices
- General Point-of-Load
C255594 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDMC8200S | onsemi | Power-33-8 | 130 | $ 0.7901 | ||
| HSCA3462 | HUASHUO | DFN-8(3x3) | 75 | $ 0.3648 | ||
| SIZ340BDT-T1-GE3 | VISHAY | Power-33-8(3x3) | 2,583 | $ 0.5818 | ||
| AGM306MDP | AGMSEMI | DFN-8(3x3) | 130 | $0.1989 $0.2093 | ||
| SIZ340ADT-T1-GE3 | VISHAY | Power-33-8(3x3) | 10 | $ 2.1591 | ||
| FDMC8200 | onsemi | Power-33-8 | 0 | $ 0.9574 | ||
| SIZF360DT-T1-GE3 | VISHAY | PowerPAIR(3x3) | 0 | $ 0.8456 |