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onsemi FDMC7200SRoHS

Manufacturer
onsemi
MPN
FDMC7200S
LCSC Part #
C255594
Packaging
Power-33-8
Customer #
Key Attributes
Dual N-Channel MOSFET, Current: 18A, Voltage: 30V
Datasheetpdf icononsemi FDMC7200S
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6158$ 0.62
10+$ 0.5232$ 5.23
30+$ 0.4842$ 14.53
100+$ 0.4338$ 43.38
500+$ 0.4127$ 206.35
1,000+$ 0.3981$ 398.10
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingPower-33-8
Current - Continuous Drain(Id)46A
RDS(on)10mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)52pF
Number2 N-Channel
Input Capacitance(Ciss)1.436nF
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)495pF
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Introduction

AI Translation

The device is housed in a Dual Power 33 (3mm x 3mm MLP) package and contains two dedicated N-channel MOSFETs. The switching nodes are internally connected, facilitating layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) are carefully designed to deliver optimal power efficiency.

Features

AI Translation
  • Q1: N-channel
  • Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A
  • Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A
  • Q2: N-channel
  • Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
  • Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
  • RoHS compliant

Applications

AI Translation
  • Mobile Computing
  • Mobile Internet Devices
  • General Point-of-Load