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HXY MOSFET HPESD5V0U1BA,115 product image
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HXY MOSFET HPESD5V0U1BA,115RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HPESD5V0U1BA,115
LCSC Part #
C25503780
Packaging
SOD-323
Customer #
Key Attributes
ESD DIODE 5VWM 12.9VC SOD-323
Datasheetpdf iconHXY MOSFET HPESD5V0U1BA,115
In-Stock: 10
10 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0684$ 0.68
100+$ 0.0541$ 5.41
300+$ 0.0469$ 14.07
3,000+$ 0.0416$ 124.80
6,000+$ 0.0373$ 223.80
9,000+$ 0.0351$ 315.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingSOD-323
Clamping Voltage12.9V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)2A@8/20us
Peak Pulse Power Dissipation (Ppp)30W@8/20us
Voltage - Breakdown5.4V
Number of Channels1
typeESD
Reverse Leakage Current (Ir)1uA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)5V

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

HPESD5V0U1BA,115 protects sensitive semiconductor components from damage or interference caused by ESD and other voltage-induced transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide best-in-class protection for designs exposed to ESD. It offers designers the flexibility to protect a single bidirectional line in applications where an array is not suitable. SOD-323 package.

Features

AI Translation
  • Compact package footprint
  • Low package height
  • Peak power up to 30W (8×20μs pulse condition)
  • Low leakage current
  • Typical response time < 1 ns
  • IEC61000-4-2 Level 4 ESD protection
  • IEC61000-4-4 Level 4 EFT protection