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HXY MOSFET HSP3012-04UTG product image
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HXY MOSFET HSP3012-04UTGRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HSP3012-04UTG
LCSC Part #
C25503770
Packaging
DFN2510-10L
Customer #
Key Attributes
ESD DIODE 5VWM 12VC DFN2510-10L
Datasheetpdf iconHXY MOSFET HSP3012-04UTG
In-Stock: 30
30 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0604$ 0.60
100+$ 0.0478$ 4.78
300+$ 0.0414$ 12.42
3,000+$ 0.0367$ 110.10
6,000+$ 0.0329$ 197.40
9,000+$ 0.031$ 279.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingDFN2510-10L
Clamping Voltage12V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)4.5A
Voltage - Breakdown6V
Number of ChannelsFour channels
typeESD
Reverse Leakage Current (Ir)1uA
PolarityUnidirectional
Reverse Stand-Off Voltage (Vrwm)5V

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

HSP3012-04UTG is a 4-channel ultra-low capacitance rail-clamp ESD protection diode array. Each channel consists of a pair of diodes that steer positive or negative ESD current to the positive or negative rail. A Zener diode is integrated in the array between the positive and negative supply rails. In a typical application, the negative rail pin (designated as GND) is connected to system ground. Positive ESD current is steered to ground through the ESD diodes and Zener diode, and positive ESD voltage is clamped to the Zener voltage. The package is DFN2510-10L.

Features

AI Translation
  • 4-channel ESD protection
  • IEC61000-4-2 Level 4 compliant ESD protection
  • ±17kV air discharge
  • ±12kV contact discharge
  • Ultra-low capacitance: 0.6pF typical
  • Low clamping voltage
  • Low operating voltage
  • Solid-state silicon technology
  • Protects four I/O lines
  • RoHS compliant and halogen-free