LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
onsemi FDN338P product image
  • FDN338P thumbnail 1
  • FDN338P thumbnail 2
  • FDN338P thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

onsemi FDN338PRoHS

Manufacturer
MPN
FDN338P
LCSC Part #
C24855
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 1.6A SOT-23
Datasheetpdf icononsemi FDN338P

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)155mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)451pF
Gate Charge(Qg)13nC@4.5V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 2.5V-specified P-channel MOSFET is fabricated using an advanced low-voltage PowerTrench process. It is optimized for battery power management applications.

Features

AI Translation
  • -1.6 A, -20 V. RDS(ON) = 115 mΩ at VGS = -4.5 V
  • RDS(ON) = 155 mΩ at VGS = -2.5 V
  • Fast switching speed
  • High-performance trench technology for ultra-low RDS(ON)
  • SuperSOT-3 delivers low RDS(ON) in the same package size with 30% higher power handling capability than SOT23

Applications

AI Translation
  • Battery Management - Load Switch - Battery Protection
In-Stock: 5,675
5,675 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2984$ 1.49
50+$ 0.2313$ 11.57
150+$ 0.2026$ 30.39
500+$ 0.1667$ 83.35
3,000+$ 0.1507$ 452.10
6,000+$ 0.1411$ 846.60
Standard Packaging3000/Full Reel
Better price for more quantity?
$