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onsemi FDN358PRoHS

Manufacturer
MPN
FDN358P
LCSC Part #
C24848
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 30V 1.5A SOT-23
Datasheetpdf icononsemi FDN358P

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation460mW
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)200mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)182pF
Gate Charge(Qg)5.6nC@10V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

AI Translation
  • Low gate charge (4 nC typical)
  • High performance trench technology for extremely low RDs(ON)
  • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability

Applications

AI Translation
  • Portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion
In-Stock: 2,425
2,425 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3536$ 1.77
50+$ 0.2741$ 13.71
150+$ 0.24$ 36.00
500+$ 0.1975$ 98.75
3,000+$ 0.1786$ 535.80
6,000+$ 0.1672$ 1003.20
Standard Packaging3000/Full Reel
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