pSemi PE42562A-X

The PE42562 is an absorptive SP6T RF switch enhanced with HaRP technology, supporting a frequency range of 9 kHz to 8 GHz. The device features an external VSS pin that can be used to bypass the internal negative voltage generator, enabling spurious-free performance. Its high isolation, low insertion loss, and fast switching time make it ideal for filter bank switching and RF signal routing in test & measurement and wireless applications up to 8 GHz. DC blocking capacitors are not required when no DC voltage is present at the RF ports. The PE42562 is manufactured using pSemi's UltraCMOS process, an advanced patented silicon-on-insulator technology. pSemi's HaRP technology enhancement delivers high linearity and excellent harmonic performance — an innovative feature of the UltraCMOS process that combines the performance of GaAs with the cost efficiency and integration density of conventional CMOS.

• High isolation: 35 dB @ 6 GHz
• Low insertion loss: 1.1 dB @ 6 GHz
• Fast switching time: 210 ns
• Power handling: 33 dBm CW
• Logic select pins for maximum control logic flexibility
• Shutdown mode with all ports terminated
• External VSS pin for spurious elimination
• Package: 24-pin 4×4×0.85 mm QFN

• Test & Measurement
• Wireless applications up to 8 GHz
• Filter bank switching
• RF signal routing