PANJIT 2N7002KDW_R1_00501
| Manufacturer | PANJITAsian Brands |
| MPN | 2N7002KDW_R1_00501 |
| LCSC Part # | C24833827 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 250mA SOT-363 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 13pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 4Ω@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 35pF | |
| Gate Charge(Qg) | 800pC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- RDS(ON), VGS@10V, ID@500mA<3Ω
- RDS(ON), VGS@4.5V, ID@200mA<4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- ESD Protected 2KV HBM
- Lead free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
In-Stock: 1,860
1,860 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0437 | $ 0.44 |
| 100+ | $ 0.0348 | $ 3.48 |
| 300+ | $ 0.0303 | $ 9.09 |
| 3,000+ | $ 0.027 | $ 81.00 |
| 6,000+ | $ 0.0243 | $ 145.80 |
| 9,000+ | $ 0.023 | $ 207.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | SOT-363 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 13pF | |
| Current - Continuous Drain(Id) | 250mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 4Ω@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 35pF | |
| Gate Charge(Qg) | 800pC@5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- RDS(ON), VGS@10V, ID@500mA<3Ω
- RDS(ON), VGS@4.5V, ID@200mA<4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- ESD Protected 2KV HBM
- Lead free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



