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Winbond W9812G6KH-6 TR product image
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Winbond W9812G6KH-6 TRRoHS

Manufacturer
WinbondAsian Brands
MPN
W9812G6KH-6 TR
LCSC Part #
C2456240
Packaging
TSOP-54-10.2mm
Customer #
Key Attributes
128Mbit 3V~3.6V 166MHz TSOP-54-10.2mm Memory (ICs) RoHS
Datasheetpdf iconWinbond W9812G6KH-6 TR
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.0707$ 2.07
200+$ 0.8022$ 160.44
500+$ 0.7746$ 387.30
1,000+$ 0.7593$ 759.30
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerWinbond
PackagingTSOP-54-10.2mm
Memory Size128Mbit
Voltage - Supply3V~3.6V
Operating temperature0℃~+70℃
Clock Frequency166MHz
FeaturesAuto precharge;Automatic column address generation;Auto refresh

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per second. To fully comply with the personal computer industrial standard, W9812G6KH is sorted into the following speed grades: -5, -5I, -5J, -6, -6I, -6J and -75. The -5/-5I grade parts are compliant to the 200MHz/CL3 specification (The -5I industrial grade which is guaranteed to support - 40℃ ≤ TA ≤ 85℃, the -5J industrial plus grade which is guaranteed to support - 40℃ ≤ TA ≤ 105℃). The -6/-6I grade parts are compliant to the 166MHz/CL3 specification (The -6I industrial grade which is guaranteed to support - 40℃ ≤ TA ≤ 85℃, the -6J industrial plus grade which is guaranteed to support - 40℃ ≤ TA ≤ 105℃). The -75 grade parts is compliant to the 133MHz/CL3 specification. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9812G6KH is ideal for main memory in high performance applications.

Features

AI Translation
  • 3.3V ± 0.3V Power Supply
  • Up to 200 MHz Clock Frequency
  • 2,097,152 Words x 4 banks x 16 bits organization
  • Self Refresh Mode
  • CAS Latency: 2 and 3
  • Burst Length: 1, 2, 4, 8 and full page
  • Burst Read, Single Writes Mode
  • Byte Data Controlled by LDQM, UDQM
  • Power Down Mode
  • Auto-precharge and Controlled Precharge
  • 4K Refresh Cycles / 64 ms, - 40℃ ≤ TA ≤ 85℃
  • 4K Refresh Cycles / 16 ms, - 40℃ ≤ TA ≤ 105℃
  • Interface: LVTTL
  • Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant