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onsemi FQD12N20LTMRoHS

Manufacturer
onsemi
MPN
FQD12N20LTM
LCSC Part #
C241837
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 200V 9A DPAK
Datasheetpdf icononsemi FQD12N20LTM
In-Stock: 285
285 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.717$ 0.72
10+$ 0.5902$ 5.90
30+$ 0.5268$ 15.80
100+$ 0.465$ 46.50
500+$ 0.3804$ 190.20
1,000+$ 0.3609$ 360.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK
Drain to Source Voltage200V
Output Capacitance(Coss)155pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.08nF
Gate Charge(Qg)21nC@5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

AI Translation
  • 9.0 A, 200 V, RDS(on)=280 mΩ (Max.) @ VGS=10 V, ID=4.5 A
  • Low Gate Charge (Typ. 16 nC)
  • Low Crss (Typ. 17 pF)
  • 100% Avalanche Tested

Applications

AI Translation
  • switched mode power supplies
  • active power factor correction (PFC)
  • electronic lamp ballasts