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EDA ModelsEasyEDA
onsemi FDD6630A
| Manufacturer | |
| MPN | FDD6630A |
| LCSC Part # | C241782 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | N-Channel, Current:21A, Voltage:30V |
| Datasheet |  onsemi FDD6630A |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 50mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 462pF | |
| Gate Charge(Qg) | 7nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
Features
AI Translation
- R DS(ON) = 50 mΩ at V GS = 4.5 V
- 21 A, 30 V, R DS(ON) = 35 mΩ at V GS = 10 V
- Low gate charge (typical 5 nC)
- Fast switching
- Ultra-low R DS(ON) achieved with high-performance trench technology
Applications
AI Translation
- DC/DC Converters - Motor Drivers
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.4381 | $ 0.44 |
| 10+ | $ 0.3579 | $ 3.58 |
| 30+ | $ 0.3224 | $ 9.67 |
| 100+ | $ 0.2792 | $ 27.92 |
| 500+ | $ 0.2607 | $ 130.35 |
| 1,000+ | $ 0.2499 | $ 249.90 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 28W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 50mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 462pF | |
| Gate Charge(Qg) | 7nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
Features
AI Translation
- R DS(ON) = 50 mΩ at V GS = 4.5 V
- 21 A, 30 V, R DS(ON) = 35 mΩ at V GS = 10 V
- Low gate charge (typical 5 nC)
- Fast switching
- Ultra-low R DS(ON) achieved with high-performance trench technology
Applications
AI Translation
- DC/DC Converters - Motor Drivers
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |