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onsemi FDC640PRoHS

Manufacturer
onsemi
MPN
FDC640P
LCSC Part #
C241774
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET P-CH 20V 4.5A SuperSOT-6
Datasheetpdf icononsemi FDC640P
In-Stock: 495
495 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.273$ 1.37
50+$ 0.2116$ 10.58
150+$ 0.1853$ 27.80
500+$ 0.1525$ 76.25
3,000+$ 0.1379$ 413.70
6,000+$ 0.1291$ 774.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Drain to Source Voltage20V
Output Capacitance(Coss)244pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)123pF
RDS(on)80mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)890pF
Gate Charge(Qg)13nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-Channel 2.5V specified MOSFET uses a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

Features

AI Translation
  • This P-Channel 2.5V specified MOSFET uses a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
  • –4.5 A, –20 V
  • RDS(ON)=0.053 Ω @ VGS=-4.5 V
  • RDS(ON)=0.080 Ω @ VGS=-2.5 V
  • Rugged gate rating (±12 V)

Applications

AI Translation
  • Battery management
  • Load switch
  • Battery protection