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onsemi FDC6305NRoHS

Manufacturer
onsemi
MPN
FDC6305N
LCSC Part #
C241765
Packaging
TSOT-23-6
Customer #
Key Attributes
MOSFET N-CH ARR 20V 2.7A TSOT-23-6
Datasheetpdf icononsemi FDC6305N
In-Stock: 3
3 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.6624$ 0.66
10+$ 0.5522$ 5.52
30+$ 0.4964$ 14.89
100+$ 0.4421$ 44.21
500+$ 0.4089$ 204.45
1,000+$ 0.347$ 347.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingTSOT-23-6
Current - Continuous Drain(Id)2.7A
RDS(on)120mΩ@2.5V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number2 N-Channel
Input Capacitance(Ciss)310pF
Gate Charge(Qg)5nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)80pF
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Introduction

AI Translation

These N-channel 2.5V low-threshold specific MOSFETs are manufactured using the advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance.

Features

AI Translation
  • These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Applications

AI Translation
  • Load switch
  • DC/DC converter
  • Motor driving