- Pinout
- Footprint
onsemi FDC6301N
| Manufacturer | |
| MPN | FDC6301N |
| LCSC Part # | C241762 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH 25V 0.22A SuperSOT-6 |
| Datasheet |  onsemi FDC6301N |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 220mA | |
| RDS(on) | 5Ω@2.7V | |
| Pd - Power Dissipation | 900mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 25V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Vgs | ±8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 6pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 220mA | |
| RDS(on) | 5Ω@2.7V | |
| Pd - Power Dissipation | 900mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 25V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Vgs | ±8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 6pF |
Introduction
These dual N-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Features
- 25 V, 0.22 A continuous, 0.5 A Peak.
- RDS(ON) = 5 Ω @ VGS = 2.7 V
- RDS(ON) = 4 Ω @ VGS = 4.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits.
- VGS(th) < 1.5V.
- Gate-Source Zener for ESD ruggedness.
-
GKV Human Body Model.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 2.3444 | $ 11.72 |
| 50+ | $ 2.2323 | $ 111.62 |
| 150+ | $ 2.1754 | $ 326.31 |
| 500+ | $ 2.1202 | $ 1060.10 |
| 3,000+ | $ 2.0877 | $ 6263.10 |
| 6,000+ | $ 2.0698 | $ 12418.80 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 220mA | |
| RDS(on) | 5Ω@2.7V | |
| Pd - Power Dissipation | 900mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 25V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Vgs | ±8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 6pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 220mA | |
| RDS(on) | 5Ω@2.7V | |
| Pd - Power Dissipation | 900mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 25V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | 700pC@4.5V | |
| Vgs | ±8V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 6pF |
Introduction
These dual N-Channel logic level enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Features
- 25 V, 0.22 A continuous, 0.5 A Peak.
- RDS(ON) = 5 Ω @ VGS = 2.7 V
- RDS(ON) = 4 Ω @ VGS = 4.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits.
- VGS(th) < 1.5V.
- Gate-Source Zener for ESD ruggedness.
-
GKV Human Body Model.
C241762 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |