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onsemi FDC610PZRoHS

Manufacturer
onsemi
MPN
FDC610PZ
LCSC Part #
C241761
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET P-CH 30V 4.9A SuperSOT-6
Datasheetpdf icononsemi FDC610PZ
In-Stock: 89
89 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.4679$ 0.47
10+$ 0.377$ 3.77
30+$ 0.338$ 10.14
100+$ 0.2909$ 29.09
500+$ 0.2697$ 134.85
1,000+$ 0.2567$ 256.70
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Drain to Source Voltage30V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)4.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.005nF
Gate Charge(Qg)24nC@10V
TypeP-Channel
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Introduction

AI Translation

This P-Channel MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

AI Translation
  • Low gate charge (17nC typical)
  • High performance trench technology for extremely low rDS(on)
  • SuperSOT –6 package: small footprint (72% smaller than standard SO–8), low profile (1mm thick)
  • RoHS Compliant

Applications

AI Translation
  • DC - DC Conversion
  • SuperSOT -6