LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
WILLSEMI ESD5431N-2/TR product image
  • ESD5431N-2/TR thumbnail 1
  • ESD5431N-2/TR thumbnail 2
  • ESD5431N-2/TR thumbnail 3
  • Pinout
  • Footprint
Images for reference only

WILLSEMI ESD5431N-2/TRRoHS

Manufacturer
WILLSEMIAsian Brands
MPN
ESD5431N-2/TR
LCSC Part #
C239673
Packaging
DFN1006-2L
Customer #
Key Attributes
TVS DIODE 3.3VWM 10VC DFN1006-2L
Datasheetpdf iconWILLSEMI ESD5431N-2/TR
In-Stock: 8,750
8,750 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0234$ 1.17
500+$ 0.019$ 9.50
1,500+$ 0.0166$ 24.90
5,000+$ 0.0151$ 75.50
25,000+$ 0.0138$ 345.00
50,000+$ 0.0131$ 655.00
Standard Packaging10000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerWILLSEMI
PackagingDFN1006-2L
Clamping Voltage10V
Operating Temperature-40℃~+85℃
Peak Pulse Current (Ipp)10A@8/20us
Peak Pulse Power Dissipation (Ppp)100W@8/20us
Number of Channels1
Voltage - Breakdown3.4V
typeTVS
Reverse Leakage Current (Ir)1nA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)3.3V

Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging10000
Sales UnitPiece

Introduction

AI Translation

The ESD5431N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. The ESD5431N may be used to provide ESD protection up to ±30 kV (contact discharge) according to IEC61000 - 4 - 2, and withstand peak pulse current up to 10A (8/20 μs) according to IEC61000 - 4 - 5. The ESD5431N is available in DFN1006 - 2L package. Standard products are Pb - free and Halogen - free.

Features

AI Translation
  • Stand - off voltage: ±3.3 V Max.
  • Transient protection for each line according to IEC61000 - 4 - 2 (ESD): ±30 kV (contact discharge)
  • IEC61000 - 4 - 4 (EFT): 40A (5/50ns)
  • IEC61000 - 4 - 5 (surge): 10A (8/20 μs)
  • Capacitance: C_J = 17.5 pF typ.
  • Low leakage current: l_R = 1 nA typ.
  • Low clamping voltage: V_CL = 8 V typ.
  • Solid - state silicon technology

Applications

AI Translation
  • Cellular handsets
  • Computers and peripherals
  • Microprocessors
  • Power lines
  • Portable Electronics
  • Notebooks